专利名称：SCHOTTKY DIODES
发明人：Xin Lin,Daniel J. Blomberg,Jiang-Kai Zuo申请号：US13150831申请日：20110601
公开号：US20110227135A1公开日：20110922
专利附图：
摘要：Improved Schottky diodes with reduced leakage current and improvedbreakdown voltage are provided by building a JFET with its current path of a firstconductivity type serially located between a first terminal comprising a Schottky contactand a second terminal. The current path lies (i) between multiple substantially parallel
finger regions of a second, opposite, conductivity type substantially laterally outboard ofthe Schottky contact, and (ii) partly above a buried region of the second conductivity typethat underlies a portion of the current path, which regions are electrically coupled to thefirst terminal and the Schottky contact and which portion is electrically coupled to thesecond terminal. When reverse bias is applied to the first terminal and Schottky contact,the current path is substantially pinched off in vertical or horizontal directions or both,thereby reducing the leakage current and improving the breakdown voltage of thedevice.
申请人：Xin Lin,Daniel J. Blomberg,Jiang-Kai Zuo
地址：Phoenix AZ US,Chandler AZ US,Chandler AZ US
国籍：US,US,US
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容