Fin-like field effect transistor (FinFET) device a

专利名称：Fin-like field effect transistor (FinFET) device

and method of manufacturing same

发明人：Chih-Hao Chang,Jeff J. Xu申请号：US12906820申请日：20101018公开号：US08367498B2公开日：20130205

专利附图：

摘要：A FinFET device and method for fabricating a FinFET device is disclosed. Anexemplary method includes providing a semiconductor substrate; forming a fin structureover the semiconductor substrate, the fin structure including a first material portion over

the semiconductor substrate and a second material portion over the first materialportion; forming a gate structure over a portion of the fin structure, such that the gatestructure traverses the fin structure, thereby separating a source region and a drainregion of the fin structure, wherein the source and drain regions of the fin structuredefine a channel therebetween; removing the second material portion from the sourceand drain regions of the fin structure; and after removing the second material portion,forming a third material portion in the source and drain regions of the fin structure.

申请人：Chih-Hao Chang,Jeff J. Xu

地址：Chu-Bei TW,Jhubei TW

国籍：TW,TW

代理机构：Haynes and Boone, LLP

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