IRFL110PBF资料

PD - 95317

IRFL110PbF

HEXFET® Power MOSFET

󰀂󰀂󰀂󰀂󰀂󰀂󰀂󰀂

Surface Mount

Available in Tape & ReelDynamic dv/dt Rating

Repetitive Avalanche RatedFast SwitchingEase of Paralleling

Simple Drive RequirementsLead-Free

DVDSS = 100VRDS(on) = 0.54ΩGSID = 1.5ADescription

Third Generation HEXFETs from International Rectifierprovide the designer with the best combination of fastswitching, ruggedized device design, low on-resistanceand cost-effectiveness.

The SOT-223 package is designed for surface-mount usingvapor phase, infra red, or wave soldering techniques. Itsunique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has theadded advantage of improved thermal performance due toan enlarged tab for heatsinking. Power dissipation ofgrreater than 1.25W is possible in a typical surface mountapplication.

SOT-223Absolute Maximum Ratings

Parameter

ID @ Tc = 25°CID @ Tc = 100°CIDM

PD @Tc = 25°CPD @TA = 25°C

Continuous Drain Current, VGS @ 10 VContinuous Drain Current, VGS @ 10 VPulsed Drain Current 󰀂Power Dissipation

Power Dissipation (PCB Mount)**Linear Derating Factor

Linear Derating Factor (PCB Mount)**Gate-to-Source Voltage

Single Pulse Avalanche Energy󰀃Avalanche Current󰀂

Repetitive Avalanche Energy󰀂Peak Diode Recovery dv/dt 󰀄

Junction and Storage Temperature RangeSoldewring Temperature, for 10 seconds

Max.

1.50.96123.12.00.0250.017-/+201501.5 0.31 5.5

-55 to + 150

300 (1.6mm from case)

Units

AW

W/°C

VGSEASIAREARdv/dtTJ, TSTG

VmJAmJV/ns

°C

Thermal Resistance

Parameter

RθJCRθJA

Junction-to-PCB

Junction-to-Ambient. (PCB Mount)**

Typ.

––––––

Max.

4060

Units

°C/W

** When mounted on 1'' square pcb (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

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IRFL110PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS∆V(BR)DSS/∆TJParameterDrain-to-Source Breakdown VoltageBreakdown Voltage Temp. CoefficientStatic Drain-to-Source On-ResistanceGate Threshold VoltageForward TransconductanceMin.Typ.Max.Units Conditions100––––––VVGS = 0V, ID = 250µA–––0.63–––V/°CReference to 25°C, ID = 1mA––––––0.54ΩVGS = 10V, ID = 0.90A 󰀂2.0–––4.0VVDS = VGS, ID = 250µA1.1––––––SVDS = 50V, ID = 0.90A󰀂––––––25VDS = 100V, VGS = 0VIDSSDrain-to-Source Leakage CurrentµA––––––250VDS = 80V, VGS = 0V, TJ = 125°CGate-to-Source Forward Leakage––––––100VGS = 20VIGSSnAGate-to-Source Reverse Leakage––––––-100VGS = -20VQgTotal Gate Charge––––––8.3ID = 5.6AQgsGate-to-Source Charge––––––2.3nCVDS = 80VQgdGate-to-Drain (\"Miller\") Charge––––––3.8VGS = 10V, See Fig. 6 and 13 󰀂td(on)Turn-On Delay Time–––6.9–––VDD = 50VtrRise Time–––16–––ID = 5.6Anstd(off)Turn-Off Delay Time–––15–––RG = 24 Ωtf Fall Time ––– 9.4 ––– RD = 8.4 Ω, See Fig. 10 󰀂LDLSCissCossCrssInternal Drain InductanceInternal Source InductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance––– 4.0 –––––– 6.0 ––––––––––––1808115–––––––––pFnHBetween lead, 6mm(0.25in)from package and centerof die contact.VGS = 0VVDS = 25Vƒ = 1.0MHz, See Fig. 5DRDS(on)VGS(th)gfsGSSource-Drain Ratings and Characteristics

IS

ISM

VSDtrrQrrtonNotes:

Parameter

Continuous Source Current(Body Diode)

Pulsed Source Current(Body Diode) 󰀃

Diode Forward VoltageReverse Recovery TimeReverse RecoveryChargeForward Turn-On Time

Min.Typ.Max.Units

Conditions

MOSFET symbol

––––––1.5

showing theA

integral reverse

––––––12

p-n junction diode.

––––––2.5VTJ = 25°C, IS = 1.5A, VGS = 0V 󰀂–––100200nsTJ = 25°C, IF = 5.6A–––0.440.88µCdi/dt = 100A/µs 󰀂

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

󰀂 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

󰀃ISD ≤ 5.6A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

󰀄 VDD=25V, starting TJ = 25°C, L = 25 mH

RG = 25Ω, IAS = 3.0A (See Figure 12)

󰀅 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

SOT-223 (TO-261AA) Part Marking InformationHEXFET PRODUCT MARKINGTHIS IS AN IRFL014PART NUMBERLOT CODEINTERNATIONALRECTIFIERFL014LOGO314PAXXXXDATE CODEA = ASSEMBLY SITE(YYWW)CODEYY = YEARTOPWW = WEEKBOTTOMP = DESIGNATES LEAD-FREEPRODUCT (OPTIONAL)www.irf.com7元器件交易网www.cecb2b.com

IRFL110PbF

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.161)3.90 (.154)0.35 (.013)0.25 (.010)1.85 (.072)1.65 (.065)TR2.05 (.080)1.95 (.077)7.55 (.297)7.45 (.294)7.60 (.299)7.40 (.292)1.60 (.062)1.50 (.059) TYP.FEED DIRECTION12.10 (.475)11.90 (.469)7.10 (.279)6.90 (.272)16.30 (.641)15.70 (.619)2.30 (.090)2.10 (.083)NOTES :1. CONTROLLING DIMENSION: MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.13.20 (.519)12.80 (.504)15.40 (.607)11.90 (.469)4330.00(13.000) MAX.50.00 (1.969) MIN.NOTES :1. OUTLINE COMFORMS TO EIA-418-1.2. CONTROLLING DIMENSION: MILLIMETER..3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.18.40 (.724) MAX.14.40 (.566)12.40 (.488)43Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 05/04

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