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IS61C1024-15JI;中文规格书,Datasheet资料

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IS61C1024IS61C1024L128K x 8 HIGH-SPEEDCMOS STATIC RAM

FEATURES

•High-speed access time: 12, 15, 20, 25 ns•Low active power: 600 mW (typical)

•Low standby power: 500 µW (typical) CMOSstandby

•Output Enable (OE) and two Chip Enable(CE1 and CE2) inputs for ease in applications•Fully static operation: no clock or refreshrequired

•TTL compatible inputs and outputs•Single 5V (±10%) power supply

•Low power version available: IS61C1024L•Commercial and industrial temperature rangesavailable

ISSI

MAY 1999

®

DESCRIPTION

The ISSI IS61C1024 and IS61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. Theyare fabricated using ISSI's high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields higher performance and lowpower consumption devices.

When CE1 is HIGH or CE2 is LOW (deselected), the deviceassumes a standby mode at which the power dissipation canbe reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enableinputs, CE1 and CE2. The active LOW Write Enable (WE)controls both writing and reading of the memory.

The IS61C1024 and IS61C1024L are available in 32-pin300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,8 x 13.4) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16DECODER512 x 2048MEMORY ARRAYVCCGNDI/ODATACIRCUITI/O0-I/O7COLUMN I/OCE1CE2OEWECONTROLCIRCUITISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors whichmay appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774SR028-1K05/12/99

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IS61C1024IS61C1024L

PIN CONFIGURATION

32-Pin SOJ

NCA16A14A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GND1234567891011121314151632313029282726252423222120191817VCCA15CE2WEA13A8A9A11OEA10CE1I/O7I/O6I/O5I/O4I/O3ISSI

PIN CONFIGURATION

32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H)

A11A9A8A13WECE2A15VCCNCA16A14A12A7A6A5A41234567891011121314151632313029282726252423222120191817OEA10CE1I/O7I/O6I/O5I/O4I/O3GNDI/O2I/O1I/O0A0A1A2A3®

PIN DESCRIPTIONS

A0-A16CE1CE2OEWEI/O0-I/O7VccGND

Address InputsChip Enable 1 InputChip Enable 2 InputOutput Enable InputWrite Enable InputInput/OutputPowerGround

OPERATING RANGE

Range

CommercialIndustrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC5V ± 10%5V ± 10%

TRUTH TABLE

Mode

Not Selected(Power-down)Output DisabledReadWrite

WEXXHHL

CE1HXLLL

CE2XLHHH

OEXXHLX

I/O OperationHigh-ZHigh-ZHigh-ZDOUTDIN

Vcc CurrentISB1, ISB2ISB1, ISB2ICC1, ICC2ICC1, ICC2ICC1, ICC2

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IS61C1024IS61C1024L

ABSOLUTE MAXIMUM RATINGS(1)

SymbolVTERMTBIASTSTGPTIOUT

Parameter

Terminal Voltage with Respect to GNDTemperature Under BiasStorage TemperaturePower Dissipation

DC Output Current (LOW)

Value–0.5 to +7.0–55 to +125–65 to +150

1.520

UnitV°C°CWmA

ISSI

®

Notes:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may causepermanent damage to the device. This is a stress rating only and functional operationof the device at these or any other conditions above those indicated in the operationalsections of this specification is not implied. Exposure to absolute maximum ratingconditions for extended periods may affect reliability.

CAPACITANCE(1,2)

SymbolCINCOUT

ParameterInput CapacitanceOutput Capacitance

ConditionsVIN = 0VVOUT = 0V

Max.57

UnitpFpF

Notes:

1.Tested initially and after any design or process changes that may affect these parameters.2.Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

SymbolParameterVOHVOLVIHVILILIILO

Output HIGH VoltageOutput LOW VoltageInput HIGH VoltageInput LOW Voltage(1)Input LeakageOutput Leakage

GND ≤ VIN ≤ VCCGND ≤ VOUT ≤ VCCOutputs Disabled

Com.Ind.Com.Ind.

Test ConditionsVCC = Min., IOH = –4.0 mAVCC = Min., IOL = 8.0 mA

Min.2.4—2.2–0.3–2–5–2–5

Max.—0.4VCC + 0.50.82525

UnitVVVVµAµA

Note:

1.VIL = –3.0V for pulse width less than 10 ns.

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IS61C1024IS61C1024L

IS61C1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

SymbolParameterICC1ICC2ISB1Vcc OperatingSupply CurrentVcc Dynamic OperatingSupply CurrentTTL Standby Current(TTL Inputs)Test ConditionsVCC = VCC MAX., CE = VILCom.IOUT = 0 mA, f = 0Ind.VCC = VCC MAX., CE = VILCom.IOUT = 0 mA, f = fMAXInd.VCC = VCC MAX.,VIN = VIH or VILCE1 ≥ VIH, f = 0 orCE2 ≤ VIL, f = 0VCC = VCC MAX.,CE1 ≤ VCC – 0.2V,CE2 ≤ 0.2VVIN > VCC – 0.2V, orVIN ≤ 0.2V, f = 0Com.Ind.-12 nsMin.Max.——————851101701804060-15 nsMin.Max.——————851101601704060-20 nsMin.Max.——————851101501604060ISSI

-25 nsMin.Max.——————851101401504060mAmAmA®

UnitISB2CMOS StandbyCurrent (CMOS Inputs)Com.Ind.——3040——3040——3040——3040mANote:

1.At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

IS61C1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

SymbolParameterICC1ICC2ISB1Vcc OperatingSupply CurrentVcc Dynamic OperatingSupply CurrentTTL Standby Current(TTL Inputs)Test ConditionsVCC = VCC MAX., CE = VILCom.IOUT = 0 mA, f = 0Ind.VCC = VCC MAX., CE = VILCom.IOUT = 0 mA, f = fMAXInd.VCC = VCC MAX,VIN = VIH or VILCE1 ≥ VIH, f = 0 orCE2 ≤ VIL, f = 0VCC = VCC MAX.,CE1 ≤ VCC – 0.2V,CE2 ≤ 0.2VVIN > VCC – 0.2V, orVIN ≤ 0.2V, f = 0Com.Ind.-15 nsMin.Max.——————851101601704060 -20 nsMin.Max.——————851101501604060-25 nsMin.Max.——————851101401504060UnitmAmAmAISB2CMOS StandbyCurrent (CMOS Inputs)Com.Ind.——500750——500750——500750µANote:

1.At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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IS61C1024IS61C1024L

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

SymbolParameterRead Cycle TimeAddress Access TimeOutput Hold TimeCE1 Access TimeCE2 Access TimeOE Access Time-12(2)

Min.Max.12—3———002200——12—12126—6——7—12-15 nsMin.Max.15—3———002200——15—15157—6——8—12-20 nsMin.Max.20—3———003300——20—20209—7——9—18ISSI

-25 nsMin.Max.25—3———003300——25—25259—10——10—20®

UnitnsnsnsnsnsnsnsnsnsnsnsnsnstRCtAAtOHAtACE1tACE2tDOEtLZOE(3)OE to Low-Z OutputtHZOE(3)OE to High-Z OutputtLZCE1(3)CE1 to Low-Z OutputtLZCE2(3)CE2 to Low-Z OutputtHZCE(3)CE1 or CE2 to High-Z OutputtPU(4)tPD(4)CE1 or CE2 to Power-UpCE1 or CE2 to Power-DownNotes:

1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0Vand output loading specified in Figure 1.2.-12 ns device for IS61C1024 only.

3.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.4.Not 100% tested.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall TimesInput and Output Timingand Reference LevelOutput Load

Unit0V to 3.0V3 ns1.5VSee Figures 1 and 2

AC TEST LOADS

480 Ω5VOUTPUT30 pFIncludingjig andscope255 Ω5VOUTPUT5 pFIncludingjig andscope255 Ω480 ΩFigure 1Figure 2

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IS61C1024IS61C1024L

AC WAVEFORMSREAD CYCLE NO. 1(1,2)

t RCADDRESSISSI

®

t AAt OHADOUTPREVIOUS DATA VALIDt OHADATA VALIDREAD1.epsREAD CYCLE NO. 2(1,3)

t RCADDRESSt AAOEt OHAt HZOEt DOECE1t LZOECE2t LZCE1t LZCE2DOUTt ACE1t ACE2HIGH-ZDATA VALIDt HZCE1t HZCE2CE2_RD2.epsNotes:

1.WE is HIGH for a Read Cycle.

2.The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.

3.Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.

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IS61C1024IS61C1024L

ISSI

-12 ns(3)

Min.Max.12101010001070—2—————————7—-15 nsMin.Max.15121212001080—2—————————7—-20 nsMin.Max.201515150012100—2—————————10—-25 nsMin.Max.252020200015120—2—————————12—nsnsnsnsnsnsnsnsnsnsns®

WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power)

SymbolParameterWrite Cycle TimeCE1 to Write EndCE2 to Write EndAddress Setup Time to Write EndAddress Hold from Write EndAddress Setup TimeWE Pulse WidthData Setup to Write EndData Hold from Write EndUnittWCtSCE1tSCE2tAWtHAtSAtPWE(4)tSDtHDtHZWE(5)WE LOW to High-Z OutputtLZWE(5)WE HIGH to Low-Z OutputNotes:

1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V andoutput loading specified in Figure 1.

2.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states toinitiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to therising or falling edge of the signal that terminates the Write.3.-12 ns device for IS61C1024 only.4.Tested with OE HIGH.

5.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

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IS61C1024IS61C1024L

AC WAVEFORMS

WRITE CYCLE NO. 1 (CE Controlled, OE is HIGH or LOW) (1)t WCADDRESSVALID ADDRESSISSI

t SAt SCE1t SCE2®

t HACE1CE2WEt AWt PWE1t PWE2t HZWEt LZWEHIGH-ZDOUTDATA UNDEFINEDt SDDINt HDDATAIN VALIDCE2_WR1.epsWRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2)t WCADDRESSVALID ADDRESSt HAOECE1CE2WELOWHIGHt AWt PWE1t SAt HZWEDATA UNDEFINEDHIGH-Zt LZWEDOUTt SDDINt HDDATAIN VALIDCE2_WR2.epsNotes:1.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states toinitiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced tothe rising or falling edge of the signal that terminates the Write.2.I/O will assume the High-Z state if OE = VIH.

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IS61C1024IS61C1024L

WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1)t WCADDRESSVALID ADDRESSISSI

®

OECE1LOWLOWHIGHt HACE2t AWt PWE2WEt SADOUTDATA UNDEFINEDt HZWEHIGH-Zt LZWEt SDDINt HDDATAIN VALIDCE2_WR3.epsIntegrated Silicon Solution, Inc. — 1-800-379-4774SR028-1K05/12/99

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IS61C1024IS61C1024L

IS61C1024 STANDARD VERSIONORDERING INFORMATION

Commercial Range: 0°C to +70°C

Speed (ns)12121212151515152020202025252525Order Part No.IS61C1024-12JIS61C1024-12KIS61C1024-12HIS61C1024-12TIS61C1024-15JIS61C1024-15KIS61C1024-15HIS61C1024-15TIS61C1024-20JIS61C1024-20KIS61C1024-20HIS61C1024-20TIS61C1024-25JIS61C1024-25KIS61C1024-25HIS61C1024-25TPackage300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)ISSI

IS61C1024 STANDARD VERSIONORDERING INFORMATION

Industrial Range: –40°C to +85°C

Speed (ns)12121212151515152020202025252525Order Part No.IS61C1024-12JIIS61C1024-12KIIS61C1024-12HIIS61C1024-12TIIS61C1024-15JIIS61C1024-15KIIS61C1024-15HIIS61C1024-15TIIS61C1024-20JIIS61C1024-20KIIS61C1024-20HIIS61C1024-20TIIS61C1024-25JIIS61C1024-25KIIS61C1024-25HIIS61C1024-25TIPackage300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)®

IS61C1024L LOW POWER VERSIONORDERING INFORMATION

Commercial Range: 0°C to +70°C

Speed (ns)15Order Part No.IS61C1024L-15JIS61C1024L-15KIS61C1024L-15HIS61C1024L-15TIS61C1024L-20JIS61C1024L-20KIS61C1024L-20HIS61C1024L-20TIS61C1024L-25JIS61C1024L-25KIS61C1024L-25HIS61C1024L-25TPackage300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)IS61C1024L LOW POWER VERSIONORDERING INFORMATION

Industrial Range: –40°C to +85°C

Speed (ns)15Order Part No.IS61C1024L-15JIIS61C1024L-15KIIS61C1024L-12HIIS61C1024L-15TIIS61C1024L-20JIIS61C1024L-20KIIS61C1024L-12HIIS61C1024L-20TIIS61C1024L-25JIIS61C1024L-25KIIS61C1024L-12HIIS61C1024L-25TIPackage300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)300-mil Plastic SOJ400-mil Plastic SOJsTSOP (Type I)TSOP (Type I)2020252510

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分销商库存信息:

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IS61C1024-15JI

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