Array substrate manufacturing method and array sub

专利名称：Array substrate manufacturing method and

array substrate

发明人：Si Deng申请号：US15031279申请日：20160229公开号：US10068933B2公开日：20180904

专利附图：

摘要：The present invention provides an array substrate manufacturing method andan array substrate. The array substrate manufacturing method of the present inventionuses an organic photoresist material to form a passivation protection layer () for

substituting the conventional passivation protection layer that is made of a silicon nitridematerial and applies one mask to subject the passivation protection layer () and aplanarization layer () to exposure and development so as to obtain a third via () that islocated above the first drain electrode () and a fourth via () that is located above thesecond drain electrode () and, thus, compared the prior art techniques, saves one maskand reduces one etching process so as to achieve the purposes of simplifying the

manufacturing process and saving manufacturing cost. The array substrate of the presentinvention has a simple structure and low manufacturing cost and possesses excellentelectrical performance.

申请人：Wuhan China Star Optoelectronics Technology Co., Ltd.

地址：Wuhan CN

国籍：CN

代理人：Leong C. Lei

更多信息请下载全文后查看