Charge transfer device achieving a large charge tr

专利名称：Charge transfer device achieving a large

charge transferring efficiency withoutsacrifice of dynamic range of output signallevel

发明人：Miwada, Kazuo, c/o NEC Corporation申请号：EP90102588.2申请日：19900209公开号：EP0383210A1公开日：19900822

专利附图：

摘要：A charge transfer device is fabricated on an n-type semiconductor substrate (21)

and comprises a p-well (22) formed in a surface portion of the semiconductor substrate,an n-type charge transfer region (23) formed in a surface portion of the well, an n-typefloating diffusion region (24) formed in the surface portion of the well and contiguous tothe charge transfer region, an insulating film (30) covering the surface portion of the well,and a plurality of gate electrodes (31 to 36) provided on the insulating film and appliedwith driving clocks in such a manner as to produce conductive channels in the chargetransfer region for transferring electric charges toward the floating diffusion region, inwhich the conductive channels in the vicinity of the floating diffusion region are graduallydecreased in width toward the floating diffusion region, and in which impurity atoms ofthe well beneath the charge transfer region in the vicinity of the floating diffusion regionare graded toward the floating diffusion region, so that the electric charges are allowedto swept thereinto without any residual.

申请人：NEC CORPORATION

地址：7-1, Shiba 5-chome Minato-ku Tokyo JP

国籍：JP

代理机构：Glawe, Delfs, Moll & Partner

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