专利名称：PLASMA ENHANCED CHEMICAL VAPOR
DEPOSITION (PECVD) METHOD OFFORMING VANADIUM OXIDE FILMS ANDVANADIUM OXIDE THIN-FILMS PREPAREDTHEREBY
发明人：ZHANG, Ji-Guang,TRACY, C., Edwin,BENSON,
David, K.,TURNER, John, A.,LIU, Ping
申请号：US1998021434申请日：19981009公开号：WO99/019534P1公开日：19990422
摘要：A method is disclosed of forming a vanadium oxide film (22) on a substrate (20)utilizing plasma enhanced chemical vapor deposition. The method includes positioning asubstrate (20) within a plasma reaction chamber (12) and then forming a precursor gascomprised of a vanadium-containing chloride gas in an inert carrier gas. This precursorgas is then mixed with selected amounts of hydrogen and oxygen and directed into thereaction chamber (12). The amounts of precursor gas, oxygen and hydrogen are selectedto optimize the final properties of the vanadium oxide film (22). An rf plasma (14) isgenerated within the reaction chamber (12) to chemically react the precursor gas with thehydrogen and the oxygen to cause deposition of a vanadium oxide film (22) on thesubstrate (20) while the chamber deposition pressure is maintained at about one torr orless. Finally, the byproduct gases are removed from the plasma reaction chamber (12).
申请人：MIDWEST RESEARCH INSTITUTE
地址：US
国籍：US
代理机构：RICHARDSON, Ken
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