FMG2G50US60September 2001
IGBT
FMG2G50US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.
Features
••••••
UL Certified No. E209204
Short Circuit rated 10us @ TC = 100°C, VGE = 15VHigh Speed Switching
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50AHigh Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2Application
•••••
AC & DC Motor ControlsGeneral Purpose InvertersRobotics
Servo ControlsUPS
C1E2G1E1G2E2Internal Circuit Diagram
Absolute Maximum Ratings T
SymbolVCESVGESIC
ICM (1)IFIFMTSCPDTJ TstgVisoMounting Torque
C = 25°C unless otherwise noted
FMG2G50US60
600± 20501005010010250-40 to +150-40 to +12525002.02.0
UnitsVVAAAAusW°C°CVN.mN.m
Description
Collector-Emitter VoltageGate-Emitter VoltageCollector Current
Pulsed Collector Current
Diode Continuous Forward CurrentDiode Maximum Forward CurrentShort Circuit Withstand TimeMaximum Power Dissipation Operating Junction TemperatureStorage Temperature RangeIsolation Voltage
Power Terminals Screw : M5Mounting Screw : M5
@ TC = 25°C@ TC = 100°C@ TC = 100°C@ TC = 25°C
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor CorporationFMG2G50US60 Rev. A
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FMG2G50US60Electrical Characteristics of IGBT T = 25°C unless otherwise noted
C
SymbolParameterTest ConditionsMin.Typ.Max.Units
Off Characteristics
BVCES∆BVCES/∆TJICESIGES
Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage
Collector Cut-Off CurrentG-E Leakage Current
VGE = 0V, IC = 250uAVGE = 0V, IC = 1mAVCE = VCES, VGE = 0VVGE = VGES, VCE = 0V
600--------0.6--------250± 100
VV/°CuAnA
On Characteristics
VGE(th)VCE(sat)
G-E Threshold VoltageCollector to Emitter Saturation Voltage
VGE = 0V, IC = 50mAIC = 50A, VGE = 15V
5.0--6.02.2
8.52.8
VV
Dynamic Characteristics
CiesCoesCres
Input CapacitanceOutput Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,f = 1MHz
------3460480140
------pFpFpF
Switching Characteristics
td(on)Turn-On Delay TimetrRise Timetd(off)Turn-Off Delay Time
Fall Timetf
EonTurn-On Switching LossEoffTurn-Off Switching Loss
Switching LossEts Total td(on)Turn-On Delay Time
Rise Timetr
Turn-Off Delay Timetd(off)
tfFall TimeEonTurn-On Switching Loss
Turn-Off Switching LossEoff
Ets Total Switching LossTscQgQgeQgc
Short Circuit Withstand TimeTotal Gate ChargeGate-Emitter ChargeGate-Collector Charge
----------------------------10------2030601101.11.22.32030702501.22.43.6--1452865
------200----------------------2104095
nsnsnsnsmJmJmJnsnsnsnsmJmJmJusnCnCnC
VCC = 300 V, IC = 50A,RG = 5.9Ω, VGE = 15VInductive Load, TC = 25°C
VCC = 300 V, IC = 50A,RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V@ TC = 100°C VCE = 300 V, IC = 50A,VGE = 15V
©2001 Fairchild Semiconductor CorporationFMG2G50US60 Rev. A
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FMG2G50US60Electrical Characteristics of DIODE T = 25°C unless otherwise noted
C
SymbolVFMtrrIrrQrr
Parameter
Diode Forward VoltageDiode Reverse Recovery TimeDiode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Test Conditions
TC = 25°C
IF = 50A
TC = 100°C
TC = 25°CTC = 100°C
IF = 50A
di / dt = 100 A/us
TC = 25°CTC = 100°CTC = 25°CTC = 100°C
Min.----------------
Typ.1.91.89013057225455
Max.2.8--130--6.5--422--
UnitsVnsAnC
Thermal Characteristics
SymbolRθJCRθJCRθCSWeight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module)Case-to-Sink (Conductive grease applied)Weight of Module
Typ.----0.05--Max.0.51.0--190
Units°C/W°C/W°C/Wg
©2001 Fairchild Semiconductor CorporationFMG2G50US60 Rev. A
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FMG2G50US60140120Common EmitterTC = 25℃20V15V14012012VCommon EmitterVGE = 15VTC = 25℃ ━━TC = 125℃ ------Collector Current, I [A]CCollector Current, I [A]C81008060402000246100806040200VGE = 10V110Collector - Emitter Voltage, VCE [V]Collector - Emitter Voltage, VCE [V]Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 560Common EmitterVGE = 15VCollector - Emitter Voltage, VC E [V]VCC = 300VLoad Current : peak of square wave450100ALoad Current [A] 40350A2IC = 30A30201100-500501001500Duty cycle : 50%TC = 100℃Power Dissipation = 70W1101001000Case Temperature, TC [℃]Frequency [KHz]Fig 3. Saturation Voltage vs. Case Temperature at Variant Current LevelFig 4. Load Current vs. Frequency20Common EmitterTC = 25℃1620Common EmitterTC = 125℃16Collector - Emitter Voltage, V [V]CECollector - Emitter Voltage, V C E [V]121288100A4IC = 30A050A4IC = 30A0048100A50A121620048121620Gate - Emitter Voltage, VGE [V]Gate - Emitter Voltage, VGE [V]Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE FMG2G50US60 Rev. A
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FMG2G50US60 70006000500040003000Coes2000Cres10000110Common EmitterVGE = 0V, f = 1MHzTC = 25℃1000Common EmitterVCC = 300V, VGE = +/- 15VIC = 50ATC = 25C 0 Capacitance [pF]TC = 125C 0TonSwitching Time [ns]CiesTr10010110Collector - Emitter Voltage, VCE [V]Gate Resistance, RG [Ω]Fig 7. Capacitance CharacteristicsFig 8. Turn-On Characteristics vs. Common EmitterVCC = 300V, VGE = +/- 15VIC = 50ATC = 25C 0 Common EmitterVCC = 300V, VGE = +/- 15VIC = 50ATC = 25C TC = 125C 00 10000 ToffSwitching Loss [uJ]1000Switching Time [ns]TC = 125C 0EoffEonEoff1000 Tf100110Gate Resistance, Rg [Ω]110Gate Resistance, RG [Ω]Fig 9. Turn-Off Characteristics vs. Gate Resistance Common EmitterVCC = 300V, VGE = +/- 15VRG = 5.9ΩTC = 25C TC = 125C 00Fig 10. Switching Loss vs. Gate Resistance Common EmitterVCC = 300V, VGE = +/- 15VRG = 5.9ΩTC = 25C TC = 125C 00 1000 Switching Time [ns]Switching Time [ns]100TonToffTfToff100TfTr10102030405060708090100102030405060708090100Collector Current, IC [A] Collector Current, IC [A]Fig 11. Turn-On Characteristics vs. Collector Current©2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector CurrentFMG2G50US60 Rev. A
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FMG2G50US60 15Common EmitterVCC = 300V, VGE = +/- 15VRG = 5.9Ω10000TC = 25C TC = 125C 00Gate - Emitter Voltage, V [ V ] GE 12Common EmitterRL = 5.9 ΩTC = 25℃VCC = 100 V 300 VSwitching Loss [uJ]EoffEonEoff10009 200 V 63100102030405060708090100004080120160Collector Current, IC [A]Gate Charge, Qg [ nC ]Fig 13. Switching Loss vs. Collector CurrentFig 14. Gate Charge Characteristics300100IC MAX. (Pulsed)IC MAX. (Continuous)50us300100Collector Current, I [A] C1㎳10DC OperationCollector Current, I [A] C100us101Single NonrepetitivePulse TC = 25℃Curves must be deratedlinerarly with increase in temperature0.31101001000Safe Operating AreaVGE = 20V, TC = 100C11101001000o0.1Collector-Emitter Voltage, VCE [V]Collector-Emitter Voltage, VCE [V]Fig 15. SOA CharacteristicsFig 16. Turn-Off SOA Characteristics3001100Thermal Response, Zthjc [℃/W]Collector Current, I [A] C100.11Single NonrepetitivePulse TJ ≤ 125℃VGE = 15VRG = 5.9 Ω 01002003004005006007000.01TC = 25℃IGBT : DIODE : 1E-310-5 1010.110-410-310-210-1100Collector-Emitter Voltage, VCE [V]Rectangular Pulse Duration [sec]Fig 17. RBSOA Characteristics©2001 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal ImpedanceFMG2G50US60 Rev. A
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FMG2G50US6016020Forward Current, I F [A]120Peak Reverse Recovery Current, I rr [A]Reverse Recovery Time, T [x10ns] rr Common CathodeVGE = 0V TC = 25℃ TC = 125℃ 10Trr80Irr540Common Cathodedi/dt = 100A/㎲TC = 25℃ TC = 100℃ 201020304050001234Forward Voltage, VF [V]Forward Current, IF [A]Fig 19. Forward CharacteristicsFig 20. Reverse Recovery Characteristics©2001 Fairchild Semiconductor CorporationFMG2G50US60 Rev. A
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FMG2G50US60Package Dimension7PM-GADimensions in Millimeters©2001 Fairchild Semiconductor Corporation
FMG2G50US60 Rev. A
元器件交易网www.cecb2b.com
TRADEMARKS
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TruTranslation™TinyLogic™UHC™UltraFET®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORINTERNATIONAL.As used herein:
1. Life support devices or systems are devices or systems2. A critical component is any component of a life supportwhich, (a) are intended for surgical implant into the body,device or system whose failure to perform can beor (b) support or sustain life, or (c) whose failure to performreasonably expected to cause the failure of the life supportwhen properly used in accordance with instructions for usedevice or system, or to affect its safety or effectiveness.provided in the labeling, can be reasonably expected toresult in significant injury to the user.
PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet IdentificationAdvance Information
Product StatusFormative or In DesignFirst Production
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
©2001 Fairchild Semiconductor Corporation Rev. H4
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