4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerMay 20074N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113MGeneral Purpose 6-Pin Photodarlington OptocouplerFeatures■High sensitivity to low input drive current■Meets or exceeds all JEDEC Registered tmDescriptionThe 4N29M, 4N30M, 4N32M, 4N33M, H11B1M andTIL113M have a gallium arsenide infrared emitteroptically coupled to a silicon planar photodarlington.Specifications■UL, C-UL approved■VDE 0884 approval available as a test option – add option V (e.g., 4N29VM)Applications ■Low power logic circuits■Telecommunications equipment■Portable electronics■Solid state relays■Interfacing coupling systems of different potentials and impedancesPackagesSchematic6161CATHODE25COLLECTORANODE16BASE61N/C34EMITTER©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerAbsolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Symbol
TOTAL DEVICE
TSTGTOPRTSOLPD
EMITTER
IFVRIF(pk)PD
DETECTOR
BVCEOBVCBOBVECOPDIC
Collector-Emitter Breakdown VoltageCollector-Base Breakdown VoltageEmitter-Collector Breakdown VoltageDetector Power Dissipation @ TA = 25°C Derate above 25°CContinuous Collector Current
303051502.0150
VVVmWmW/°CmA
Continuous Forward CurrentReverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)LED Power Dissipation @ TA = 25°C Derate above 25°C
8033.01502.0
mAVAmWmW/°C
Storage TemperatureOperating Temperature
Lead Solder Temperature (Wave)
Total Device Power Dissipation @ TA = 25°C Derate above 25°C
-40 to +150-40 to +100260 for 10 sec
2503.3
°C°C°CmWmW/°C
ParameterValueUnits
©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerElectrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
VF
Input Forward Voltage*
IF = 10mA
4NXXMH11B1M, TIL113M
IR
Reverse Leakage Current*
VR = 3.0VVR = 6.0V
CBVCEO
Capacitance*
VF = 0V, f = 1.0MHz
4NXXMH11B1M, TIL113M
All4NXXM, TIL113MH11B1M
BVCBOBVECO
Collector-Base Breakdown Voltage*
IC = 100µA, IE = 0
All4NXXMH11B1M, TIL113M
ICEO
Collector-Emitter Dark Current*
VCE = 10V, Base Open
All
Emitter-Collector Breakdown Voltage*IE = 100µA, IB = 0
3025305.070.8
1.21.20.0010.001150606010010101
100
nAVV
1.51.510010
pFV µAV
ParameterTest ConditionsDeviceMin.Typ.Max.Unit
DETECTOR
Collector-Emitter Breakdown Voltage*IC = 1.0mA, IB = 0
Transfer Characteristics
Symbol
IC(CTR)
Parameter
Collector Output Current*(1, 2)
Test Conditions
IF = 10mA, VCE = 10V, IB = 0
Device
4N32M, 4N33M 4N29M, 4N30M
Min.
50 (500)10 (100)5 (500)30 (300)
Typ.Max.Unit
mA (%)
DC CHARACTERISTICS
IF = 1mA, VCE = 5VIF = 10mA, VCE = 1V
VCE(SAT)
Saturation Voltage*(2)
IF = 8mA, IC = 2.0mAIF = 1mA, IC = 1mA
AC CHARACTERISTICS
ton
Turn-on Time
IF = 200mA, IC = 50mA, VCC = 10V, RL = 100ΩIF = 10mA, VCE = 10V, RL = 100Ω
toff
Turn-off Time
IF = 200mA, IC = 50mA, VCC = 10V, RL = 100Ω
H11B1MTIL113M 4NXXMTIL113MH11B1M4NXXM, TIL113MH11B1M4N32M, 4N33M, TIL113M4N29M, 4N30M
1.01.251.05.0
25
100
V
µS
µS
40
1830
kHz
IF = 10mA, VCE = 10V, RL = 100Ω
BW
Bandwidth(3, 4)
H11B1M
©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerElectrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued)
Isolation Characteristics
Symbol
VISO
CharacteristicTest ConditionsDevice
All4N32M*4N33M*AllAll
Min.
7500250015001011Typ.Max.Units
Vac(peak)
VΩ
Input-Output Isolation Voltage(5)II-O ≤ 1µA, Vrms, t = 1sec.
VDC
VDC
Isolation Resistance(5)Isolation Capacitance
(5)RISOCISO
VI-O = 500VDCVI-O = Ø, f = 1MHz
0.8pF
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current.2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
4. The frequency at which IC is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerTypical Performance Curves Fig. 1 LED Forward Voltage vs. Forward Current1.81.71.61.41.2 VCE = 5.0V TA = 25°CNormalized toIF = 10 mAFig. 2 Normalized CTR vs. Forward CurrentVF - FORWARD VOLTAGE (V)1.61.51.41.3TA = 25°C1.21.11.0110100TA = 100°CNORMALIZED CTR1.00.80.60.40.20.0TA = -55°C02468101214161820IF - LED FORWARD CURRENT (mA)IF - FORWARD CURRENT (mA)Fig. 3 Normalized CTR vs. Ambient Temperature1.41.0Fig. 4 CTR vs. RBE (Unsaturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))0.90.8IF = 10 mA0.70.60.50.40.30.2 VCE= 5.0 V0.10.0IF = 5 mAIF = 20 mA1.2IF = 5 mA NORMALIZED CTR1.0IF = 10 mA 0.80.6IF = 20 mA 0.4Normalized toIF = 10 mA TA = 25°C-60-40-200204060801000.2101001000TA - AMBIENT TEMPERATURE (°C) RBE- BASE RESISTANCE (kΩ)Fig. 5 CTR vs. RBE (Saturated)1.0100Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))0.9VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE= 0.3 V0.80.70.60.50.40.30.20.10.0101001000IF = 5 mAIF = 10 mAIF = 20 mATA = 25˚C101 IF = 2.5 mA0.10.01 IF = 5 mA IF = 10 mA IF = 20 mA0.0010.010.1110 RBE- BASE RESISTANCE (k Ω)IC - COLLECTOR CURRENT (mA)©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerTypical Performance Curves (Continued)Fig. 7 Switching Speed vs. Load Resistor1000IF = 10 mA VCC = 10 VTA = 25°C5.04.54.03.53.02.52.01.51.00.510100100010000100000VCC = 10 VIC = 2 mARL = 100 Ω Fig. 8 Normalized ton vs. RBESWITCHING SPEED - (µs)10010ToffTfTon1Tr0.10.1110100R-LOAD RESISTOR (kΩ)NORMALIZED ton - (ton(RBE) / ton(open)) RBE- BASE RESISTANCE (k Ω)Fig. 9 Normalized toff vs. RBEICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.41.310000Fig. 10 Dark Current vs. Ambient TemperatureVCE = 10 VTA = 25°CNORMALIZED toff - (toff(RBE) / toff(open))1.21.11.00.90.80.70.60.50.40.30.20.110100100010000100000VCC = 10 VIC = 2 mARL = 100 Ω 10001001010.10.010.001020406080100 RBE- BASE RESISTANCE (k Ω) TA - AMBIENT TEMPERATURE (°C)TEST CIRCUITVCC = 10VWAVE FORMSINPUT PULSEIF INPUTRBE ICRL OUTPUT10%90%trtonAdjust IF to produce IC = 2 mAtftoffOUTPUT PULSEFigure 11. Switching Time Test Circuit and Waveforms©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerPackage DimensionsThrough Hole0.350 (8.89)0.320 (8.13)Pin 1 IDSurface Mount0.350 (8.89)0.320 (8.13)PIN 1 ID0.260 (6.60)0.240 (6.10)0.260 (6.60)0.240 (6.10)0.390 (9.90)0.332 (8.43)SEATING PLANESEATING PLANE0.070 (1.77)0.040 (1.02)0.070 (1.77)0.040 (1.02)0.014 (0.36)0.010 (0.25)0.320 (8.13)0.320 (8.13)0.014 (0.36)0.010 (0.25)0.200 (5.08)0.115 (2.93)0.200 (5.08)0.115 (2.93)0.012 (0.30)0.008 (0.20)0.100 (2.54)0.015 (0.38)0.020 (0.50)0.016 (0.41)0.100 (2.54)15°0.012 (0.30)0.025 (0.63)0.020 (0.51)0.020 (0.50)0.016 (0.41)0.100 [2.54]0.035 (0.88)0.006 (0.16)0.4\" Lead Spacing0.350 (8.89)0.320 (8.13)PIN 1 IDRecommended Pay Layout forSurface Mount Leadform0.070 (1.78)0.260 (6.60)0.240 (6.10)0.060 (1.52)0.070 (1.77)0.040 (1.02)SEATING PLANE0.014 (0.36)0.010 (0.25)0.415 (10.54)0.100 (2.54)0.295 (7.49)0.200 (5.08)0.115 (2.93)0.030 (0.76)0.100 (2.54)0.015 (0.38)0.020 (0.50)0.016 (0.41)0.100 [2.54]0.012 (0.30)0.008 (0.21)0.425 (10.80)0.400 (10.16)Note:All dimensions are in inches (millimeters).©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerOrdering InformationSuffix No SuffixSSR2TVTVSVSR2VExample4N32M4N32SM4N32SR2M4N32TM4N32VM4N32TVM4N32SVM4N32SR2VMSurface Mount Lead BendOptionStandard Through Hole DeviceSurface Mount; Tape and reel0.4\" Lead SpacingVDE 0884VDE 0884, 0.4\" Lead SpacingVDE 0884, Surface MountVDE 0884, Surface Mount, Tape & ReelMarking Information14N29V X YY Q34526Definitions123456Fairchild logoDevice numberVDE mark (Note: Only appears on parts ordered with VDE option – See order entry table)One digit year code, e.g., ‘7’Two digit work week ranging from ‘01’ to ‘53’Assembly package code©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerTape Dimensions 12.0 ± 0.14.5 ± 0.202.0 ± 0.050.30 ± 0.054.0 ± 0.1Ø1.5 MIN1.75 ± 0.1011.5 ± 1.021.0 ± 0.124.0 ± 0.39.1 ± 0.200.1 MAX10.1 ± 0.20Ø1.5 ± 0.1/-0User Direction of FeedNote:All dimensions are in millimeters.Reflow Soldering Profile300280260240220200180160°C1401201008060402000260°C>245°C = 42 SecTime above 183°C = 90 Sec1.822°C/Sec Ramp up rate33 Sec60120180270360Time (s)©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington OptocouplerTRADEMARKSThefollowingareregisteredandunregisteredtrademarksFairchildSemiconductorownsorisauthorizedtouseandisnotintendedtobeanexhaustivelistofallsuchtrademarks.ACExAcrosstheboard.Aroundtheworld.™ActiveArray™Bottomless™BuilditNow™CoolFET™CorePLUS™CROSSVOLT™CTL™CurrentTransferLogic™DOME™2ECMOS™®EcoSPARKEnSigna™FACTQuietSeries™®FACT®FASTFASTr™FPS™®FRFETGlobalOptoisolator™GTO™®HiSeC™i-Lo™ImpliedDisconnect™IntelliMAX™ISOPLANAR™MICROCOUPLER™MicroPak™MICROWIRE™Motion-SPM™MSX™MSXPro™OCX™OCXPro™®OPTOLOGIC®OPTOPLANARPACMAN™PDP-SPM™POP™®Power220®Power247PowerEdge™PowerSaver™Power-SPM™®PowerTrenchProgrammableActiveDroop™®QFETQS™QTOptoelectronics™QuietSeries™RapidConfigure™RapidConnect™ScalarPump™SMARTSTART™®SPMSTEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™®ThePowerFranchise™TinyBuck™®TinyLogicTINYOPTO™TinyPower™TinyWire™TruTranslation™µSerDes™®UHCUniFET™VCX™Wire™TinyBoost™DISCLAIMERFAIRCHILDSEMICONDUCTORRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANYPRODUCTSHEREINTOIMPROVERELIABILITY,FUNCTION,ORDESIGN.FAIRCHILDDOESNOTASSUMEANYLIABILITYARISINGOUTOFTHEAPPLICATIONORUSEOFANYPRODUCTORCIRCUITDESCRIBEDHEREIN;NEITHERDOESITCONVEYANYLICENSEUNDERITSPATENTRIGHTS,NORTHERIGHTSOFOTHERS.THESESPECIFICATIONSDONOTEXPANDTHETERMSOFFAIRCHILD’SWORLDWIDETERMSANDCONDITIONS,SPECIFICALLYTHEWARRANTYTHEREIN,WHICHCOVERSTHESEPRODUCTS.LIFESUPPORTPOLICYFAIRCHILD’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.Asusedherein:1.Lifesupportdevicesorsystemsaredevicesorsystemswhich,(a)areintendedforsurgicalimplantintothebodyor(b)supportorsustainlife,and(c)whosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabeling,canbereasonablyexpectedtoresultinasignificantinjuryoftheuser.PRODUCTSTATUSDEFINITIONSDefinitionofTermsDatasheetIdentificationAdvanceInformationPreliminaryProductStatusFormativeorInDesignFirstProduction2.Acriticalcomponentinanycomponentofalifesupport,device,orsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceorsystem,ortoaffectitssafetyoreffectiveness.DefinitionThisdatasheetcontainsthedesignspecificationsforproductdevelopment.Specificationsmaychangeinanymannerwithoutnotice.Thisdatasheetcontainspreliminarydata;supplementarydatawillbepublishedatalaterdate.FairchildSemiconductorreservestherighttomakechangesatanytimewithoutnoticetoimprovedesign.Thisdatasheetcontainsfinalspecifications.FairchildSemiconductorreservestherighttomakechangesatanytimewithoutnoticetoimprovedesign.ThisdatasheetcontainsspecificationsonaproductthathasbeendiscontinuedbyFairchildSemiconductor.Thedatasheetisprintedforreferenceinformationonly.Rev.I27NoIdentificationNeededFullProductionObsoleteNotInProduction©2007 Fairchild Semiconductor Corporation4NXXM, H11B1M, TIL113M Rev. 1.0.0
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